The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequency switching efficiency. In this study. better current density and reliable dynamic behaviors of p-GaN gate HEMTs were obtained simultaneo... https://countryscenesaddleryandpetsuppliers.shop/product-category/spur/